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·Low Collector Saturation Voltage ·Low Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.
s otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB=900V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 5V MIN TYP. MAX UNIT 700 V 2.0 V 1000 μA 5 mA 18 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC product.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3030 |
Fuji Electric |
TRIPLE DIFFUSED PLANER TYPE NPN TRANSISTOR |
|
| 2 | 2SC3038 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3038 |
SavantIC |
Silicon power Transistor |
|
| 4 | 2SC3038 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3039 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC3039 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC3039 |
SavantIC |
Silicon NPN Power Transistors |
|
| 8 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 9 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 11 | 2SC3007 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC3011 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer Transistor |
|