2SC3007 - Toshiba

2SC3007 Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Low Collector Saturation Voltage : VC E(sat)=0.5V(Max.) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . ) INDUSTRIAL APPLICATIONS Unit in mm 09.3 9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Vol.

Features

. Low Collector Saturation Voltage : VC E(sat)=0.5V(Max.) at I C=1A . High Speed Switching Time : t s tg=l - O^ts (Typ . ) INDUSTRIAL APPLICATIONS Unit in mm 09.3 9 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC T J T stg ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO Emitter Cut-off Current Collector-Emitter Breakdown Voltage lEBO V (BR.