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2SC3032 |
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| Part Number | 2SC3032 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·Low Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
s otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB=900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 5V
MIN TYP. MAX UNIT
700
V
2.0
V
1000 μA
5
mA
18
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC product... |
| Document |
 2SC3032 Data Sheet
PDF 186.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3030 |
Fuji Electric |
TRIPLE DIFFUSED PLANER TYPE NPN TRANSISTOR |
|
| 2 | 2SC3038 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC3038 |
SavantIC |
Silicon power Transistor |
|
| 4 | 2SC3038 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3039 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|