2SC2757 - Inchange

2SC2757 Silicon Power Transistor

·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Em.

Features

.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 60 240 fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 800 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.5 pF rbb’
• CC Base Time Constant IC= 5mA ; VCB= 10V;f= 31.9MHz 10 15 ps  hFE Classifications Marking T32 T33 T34 hFE 60-120 90-180 120-240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in genera.