·With TO-3N package ·High voltage ,high speed APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter volt.
n voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10A ;IB=2A; L=50µH IC=10A ;IB=2A IC=10A ;IB=2A VCB=400V; IE=0 VCE=400V; VBE(off)=-1.5V Ta=125 VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=10A ; VCE=5V 15 10 7 MIN 400 2SC2751 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 TYP. MAX UNIT V 1.0 1.5 100 100 1.0 10 80 V V µA µA mA µA Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;IB1=-IB2=2A RL=15@; VCCA150V 1.0 2.5 0.7 µs µs µs hFE-1 Classifications N 1.
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Current Capability ·High Power Dissipation ·Minimum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2750 |
ETC |
NPN Transistor | |
2 | 2SC2750 |
INCHANGE |
Silicon NPN Power Transistor | |
3 | 2SC2752 |
NEC |
NPN SILICON POWER TRANSISTOR | |
4 | 2SC2752 |
INCHANGE |
NPN Transistor | |
5 | 2SC2752 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2753 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
7 | 2SC2754 |
Toshiba |
Silicon NPN Transistor | |
8 | 2SC2756 |
NEC |
NPN Silicon Transistor | |
9 | 2SC2756R |
NEC |
NPN Silicon Transistor | |
10 | 2SC2757 |
Inchange |
Silicon Power Transistor | |
11 | 2SC2759 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
12 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |