2SC2753 - Toshiba Semiconductor

2SC2753 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm · Low noise figure, high gain · NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) · NF = 1.7dB, |S21e|2 = 10.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage C.

Features

¾ 16 ¾ ¾ 10.5 ¾ dB ¾ 1.5 ¾ dB ¾ 1.7 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1.0 V, IE = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note) ¾ ¾ 30 ¾ ¾ ¾ ¾ ¾ 1.1 0.65 1 1 180 ¾ ¾ mA mA pF pF Note: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-19 2SC2753 2 2003-03-19 2SC2753 3 2003-03-19 2SC2753 RESTRICTIONS ON PRO.