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·High breakdown voltage ·Complementary to 2SA1156 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C.
mA VBE(sat) Base-Emitter Saturation Voltage IC=0.3A; IB= 60mA ICBO Collector Cutoff Current VCB= 500V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V hFE-1 Classifications M L K 20-40 30-60 40-80 2SC2752 MIN TYP. MAX UNIT 1.0 V 1.2 V 1 μA 1 μA 20 80 10 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC produ.
2SC2752 - SavantIC
·With TO-126 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·Low power switching regulat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2750 |
ETC |
NPN Transistor |
|
| 2 | 2SC2750 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 3 | 2SC2751 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2751 |
Savant |
Silicon NPN Power Transistors |
|
| 5 | 2SC2753 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC2754 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC2756 |
NEC |
NPN Silicon Transistor |
|
| 8 | 2SC2756R |
NEC |
NPN Silicon Transistor |
|
| 9 | 2SC2757 |
Inchange |
Silicon Power Transistor |
|
| 10 | 2SC2759 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 11 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 12 | 2SC2703 |
JCET |
NPN Transistor |
|
