2SC2324 - Hitachi Semiconductor

2SC2324 Silicon NPN Transistor

2SC2324(K) Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO I.

Features

or to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. V(BR)EBO I CBO hFE VCE(sat) VBE(sat) t on t off Maximum Collector Dissipation Curve 10 Collector power dissipation Pc (W) 3 i C (peak) 10 Area of Safe Operation 1µ s Collector Current IC (A) 8 1.0 IC (max) 0µ s PW 6 0.3 Ta = 25°C 1 Shot Pulse DC (TC = 25°C) 1m s =1 DC 0m s 4 Op era 2 0.1 tio n 0.03 0 50 100 150 Case Temperature TC (°C) 200 1 2 5 10 20 50 100 Collector to emitter Voltage VCE (V) 2 2SC2324(K) Typical Output Characteristics 2.0 TC = 25°C 0.5 0..