2SC2320 - Mitsubishi

2SC2320 NPN Epitaxial Planar Silicon Transistor

2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage C.

Features

= 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA V μA μA VCE(sat) Ic = 100mA, IB = 10mA V MHz pF dB Transition Frequency Collector Output Capacitance Noise Figure fT Cob NF VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA f = 100Hz, RG = 10kΩ Rank hFE D E F hFE Rank classification : G 90~180 150~300 250~500 400~800 MITSUBISHI ELECTRIC Free Datasheet http://www.datasheet4u.com/ 2SC2320 MITSUBISHI ELECTRIC Free Datasheet http://www.datasheet4u.com/ .