·With TO-3 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO IC PC.
oltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 8A; IB= 1.6A VCB=500V;IB= 0 VEB= 7V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC=10A ; VCE= 4V MIN MAX UNIT 1.0 V 1.5 V 1 mA 1 mA 15 50 10 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipmen.
·With TO-3 package ·High speed ,high voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator applicat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2305 |
INCHANGE |
NPN Transistor | |
2 | 2SC2305 |
Philips |
Silicon NPN Power Transistors | |
3 | 2SC2305 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC2307 |
Sanken Electric |
Silicon NPN Transistor | |
5 | 2SC2307 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2307 |
INCHANGE |
NPN Transistor | |
7 | 2SC2308 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC2308 |
Renesas |
Silicon NPN Transistor | |
9 | 2SC2309 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
10 | 2SC2310 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SC2310 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
12 | 2SC2310 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |