·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base.
voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=500V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V IC=1A ; VCE=12V 10 MIN 400 500 7 2SC2307 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 0.5 1.3 100 100 V V µA µA 18 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2307 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com.
·Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robus.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2304 |
INCHANGE |
NPN Transistor | |
2 | 2SC2304 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC2305 |
INCHANGE |
NPN Transistor | |
4 | 2SC2305 |
Philips |
Silicon NPN Power Transistors | |
5 | 2SC2305 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2308 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
7 | 2SC2308 |
Renesas |
Silicon NPN Transistor | |
8 | 2SC2309 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
9 | 2SC2310 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
10 | 2SC2310 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
11 | 2SC2310 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor | |
12 | 2SC2310 |
CHINA BASE |
NPN Silicon Epitaxial Planar Transistor |