·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage.
e breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=400V; IE=0 VEB=5V; IC=0 IC=1.6A ; VCE=5V IC=8A ; VCE=5V 10 8 MIN 400 7 2SC2266 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 10 10 50 V V µA µA 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2266 Fig.2 Outline dimensions 3 .
·With TO-3 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and re.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2260 |
INCHANGE |
NPN Transistor | |
2 | 2SC2260 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC2261 |
INCHANGE |
NPN Transistor | |
4 | 2SC2261 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC2262 |
INCHANGE |
NPN Transistor | |
6 | 2SC2262 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC2263 |
Panasonic Semiconductor |
Si NPN Epitaxial Planar Transistor | |
8 | 2SC2267 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor | |
9 | 2SC2200 |
Toshiba |
SILICON NPN TRANSISTOR | |
10 | 2SC2204 |
Toshiba |
SILICON NPN TRANSISTOR | |
11 | 2SC2206 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
12 | 2SC2209 |
Panasonic Semiconductor |
Silicon NPN Transistor |