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·With TO-3 package ·Complement to type 2SA981 APPLICATIONS ·For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-ba.
current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=180V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 30 MIN 120 6 2SC2261 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 0.1 0.1 180 15 V mA mA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2261 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SC2261 - INCHANGE
·High Power Dissipation- : PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min.) ·Complement.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2260 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2260 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2262 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2262 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2263 |
Panasonic Semiconductor |
Si NPN Epitaxial Planar Transistor |
|
| 6 | 2SC2266 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2266 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2267 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 9 | 2SC2200 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 10 | 2SC2204 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 11 | 2SC2206 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC2209 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|