SILICON NPN TRIPLE DIFFUSED TYPE 2SC2200 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES • Excellent Switching Time (I C=3A) : t r=1.0ys Max. tf=1.0ys Max. • High Collector Breakdown Voltage : V CEO=400V INDUSTRIAL APPLICATIONS Unit in mm 01&5 tQl m+C.12 014.0-0.10 jZflO^Q05 24.38- 0.05.
• Excellent Switching Time (I C=3A)
: t r=1.0ys Max.
tf=1.0ys Max.
• High Collector Breakdown Voltage : V CEO=400V
INDUSTRIAL APPLICATIONS Unit in mm
01&5 tQl
m+C.12
014.0-0.10
jZflO^Q05
24.38- 0.05
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL v CBO
RATING UNIT 500 V
Collector-Emitter Voltage
VCEO
400
Emitter-Base Voltage
Collector Current
Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature
VEBO
IB PC
40 150
1. BASE 2. EMITTER
COLLECTOR (HEAT SINK)
Storage Temperature Range
T stg
-65^150 °C
TOSHIBA 2- 14A1A
ELECTRICAL CHARACTE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC2204 |
Toshiba |
SILICON NPN TRANSISTOR | |
2 | 2SC2206 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
3 | 2SC2209 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | 2SC2209 |
INCHANGE |
NPN Transistor | |
5 | 2SC2209 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC2210 |
Sanyo Semicon Device |
NPN Transistor | |
7 | 2SC2210 |
Sanyo Semiconductor |
NPN Epitaxial Planar Silicon Transistor | |
8 | 2SC2215 |
Toshiba |
SILICON NPN TRANSISTOR | |
9 | 2SC2216 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
10 | 2SC2216 |
LGE |
NPN Transistor | |
11 | 2SC2216 |
Cnelectr |
NPN Transistor | |
12 | 2SC2216 |
WEJ |
NPN Transistor |