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·High Power Dissipation- : PC= 80W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA980 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.
n Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V 2SC2260 MIN TYP. MAX UNIT 100 V 1.5 V 1.0 mA 1.0 mA 30 15 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not.
2SC2260 - SavantIC
·With TO-3 package ·Complement to type 2SA980 APPLICATIONS ·For power switching and general purpose applications PINNING.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC2261 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2261 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2262 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2262 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2263 |
Panasonic Semiconductor |
Si NPN Epitaxial Planar Transistor |
|
| 6 | 2SC2266 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2266 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2267 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 9 | 2SC2200 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 10 | 2SC2204 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 11 | 2SC2206 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC2209 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|