2SC1518 - Panasonic Semiconductor

2SC1518 Silicon NPN Transistor

Transistors 2SC1518 Silicon NPN epitaxial planar type For high-frequency bias oscillation of tape recorders For DC-DC converter 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 ■ Features • Low collector-emitter saturation voltage VCE(sat) 13.5±0.5 0.7–+00..23 • Satisfactory operation performances and high efficiency with a low- 0.7±0.1 voltage power supply ■ Abs.

Features

• Low collector-emitter saturation voltage VCE(sat) 13.5±0.5 0.7
  –+00..23
• Satisfactory operation performances and high efficiency with a low- 0.7±0.1 voltage power supply
■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 25 V c type Collector-emitter voltage (Base open) VCEO 20 V n d ge. ed Emitter-base voltage (Collector open) VEBO 5 (3.2) V le sta ntinu Collector current IC 1 A a e cyc isco Peak collector current ICP 1.5 A life d, d Collector power dissipation PC 1 W n u duct type Junction tempe.