Silicon Power Transistor 2SC1505 NPN 2SC1505 www.DataSheet4U.com (1.5 W) 2SC1505 TO-220AB VCBO = 300 V Cob = 4.5 pF MAX. (TO-220AB) TA = 25°C – – – VCBO VCEO VEBO IC PT TA = 25°C TC = 25°C Tj Tstg 300 300 7.0 200 1.2 15 150 –55 +150 V V V mA W W °C °C ( D14860JJ3V0DS00 TC-5084B October 2000 NS 3 CP(K) 1982, 2000 2SC1505 TA = 25°C MIN. ICBO IEBO .
OLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 200 VCE = 5 V IC (mA) 200 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 mA 9.0 mA 8.0 mA 7.0 mA 6.0 mA 5.0 mA IC (mA) 160 160 mA 4.0 A 3.0 m A 2.0 m IB = 1.0 mA 120 120 80 80 40 40 0 0 0 0.4 0.6 0.8 VBE (V) 1.0 0 2 4 6 8 10 12 14 16 VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 16 14 IC (mA) 160 µ A 140 µA 120 µ A 100 µA 80 µ A DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 VCE = 10 V hFE 12 10 8 6 4 IB = 20 µA 100 TA = 125˚C 75˚C 25˚C −25˚C 40 µ A 60 µ A 10 2 0 1 0 50 100 150 200 VCE (V) 250 1 10 .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC1501 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC1504 |
INCHANGE |
NPN Transistor | |
3 | 2SC1504 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC1506 |
NEC |
NPN Silicon Transistor | |
5 | 2SC1507 |
INCHANGE |
NPN Transistor | |
6 | 2SC1507 |
NEC |
NPN Silicon Transistor | |
7 | 2SC1509 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
8 | 2SC1514 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor | |
9 | 2SC1514 |
SavantIC |
SILICON POWER TRANSISTOR | |
10 | 2SC1515 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
11 | 2SC1515K |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SC1516 |
INCHANGE |
NPN Transistor |