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With TO-220 package ·Low collector saturation voltage APPLICATIONS ·For medium power amplifer applicatons PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Co.
t Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1mA ,IC=0 IC=1A; IB=0.1A IC=1A; IB=0.1A VCB=35V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.2A ; VCE=10V 60 MIN 35 5 2SC1516 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 1.5 20 20 200 110 V V µA µA MHz hFE Classifications B 60-120 C 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1516 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 .
2SC1516 - INCHANGE
·High Collector Current IC= 1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·100%.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1514 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC1514 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1515 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC1515K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC1518 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC1501 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC1504 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1504 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC1505 |
NEC |
Silicon Power Transistor |
|
| 10 | 2SC1505 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC1506 |
NEC |
NPN Silicon Transistor |
|
| 12 | 2SC1507 |
INCHANGE |
NPN Transistor |
|