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With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25 APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT.
CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IE=1mA ; IC=0 IC=1A; IB=0.1A IC=1A ;IB=0.1A VCB=400V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=0.1A ; VCE=10V 20 MIN 300 6 2SC1504 SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.0 1.5 0.1 0.1 V V mA mA 10 MHz 2 SavantIC Semiconductor www.DataSheet4U.com .
2SC1504 - INCHANGE
·With TO-66 Package ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and r.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC1501 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1505 |
NEC |
Silicon Power Transistor |
|
| 3 | 2SC1505 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC1506 |
NEC |
NPN Silicon Transistor |
|
| 5 | 2SC1507 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC1507 |
NEC |
NPN Silicon Transistor |
|
| 7 | 2SC1509 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC1514 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 9 | 2SC1514 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1515 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC1515K |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC1516 |
INCHANGE |
NPN Transistor |
|