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With TO-3PN package ·Wide area of safe operation APPLICATIONS ·For power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitte.
ase-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-3A; IB=-0.3A IC=-1A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V 40 20 20 MIN -100 -100 -5 2SB979 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V V -1.5 -1.5 -50 -50 200 V V µA µA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB979 Fig.2 outline .
2SB979 - Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB970 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB970 |
Kexin |
Transistor |
|
| 3 | 2SB970 |
TY Semiconductor |
Transistor |
|
| 4 | 2SB974 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB974 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | 2SB975 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB975 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 8 | 2SB976 |
Panasonic Semiconductor |
PNP Transistor |
|
| 9 | 2SB976 |
Panasonic Semiconductor |
Power Transistors |
|
| 10 | 2SB977 |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 11 | 2SB977A |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 12 | 2SB900 |
SavantIC |
SILICON POWER TRANSISTOR |
|