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·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-bas.
oltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-30mA ;IB=0 IC=-1mA ;IE=0 IE=-5mA ;IC=0 IC=-3A; IB=-3mA IC=-3A; IB=-3mA VCB=-100V; IE=0 VCE=-50V; IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-2V 2000 MIN -100 -100 -5 -1.5 -2.0 -1 -100 -5.0 15000 TYP. MAX UNIT V V V V V µA µA mA SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB975 Fig.2 Outline dimensions (unindicated tole.
2SB975 - Inchange Semiconductor
·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB970 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB970 |
Kexin |
Transistor |
|
| 3 | 2SB970 |
TY Semiconductor |
Transistor |
|
| 4 | 2SB974 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB974 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | 2SB976 |
Panasonic Semiconductor |
PNP Transistor |
|
| 7 | 2SB976 |
Panasonic Semiconductor |
Power Transistors |
|
| 8 | 2SB977 |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 9 | 2SB977A |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 10 | 2SB979 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB979 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 12 | 2SB900 |
SavantIC |
SILICON POWER TRANSISTOR |
|