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·High DC Current Gain- : hFE = 2000(Min)@ IC= -2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1308 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATIN.
n Power Transistor 2SB974 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -2mA ICBO Collector Cutoff Current VCB= -100V, IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -2A; VCE= -2V hFE-2 DC Current Gain IC= -4A; VCE= -2V Switching times ton Turn-on Time tstg Storage Time tf Fall Time RL= 25Ω, VCC≈ -50V IC= -2A; IB1= -IB2= -2mA MIN TYP. MAX UNIT -1.5 V -2.0 V -1.0 μA -5 mA .
2SB974 - SavantIC
·With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency po.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB970 |
Panasonic Semiconductor |
PNP Transistor |
|
| 2 | 2SB970 |
Kexin |
Transistor |
|
| 3 | 2SB970 |
TY Semiconductor |
Transistor |
|
| 4 | 2SB975 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB975 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 6 | 2SB976 |
Panasonic Semiconductor |
PNP Transistor |
|
| 7 | 2SB976 |
Panasonic Semiconductor |
Power Transistors |
|
| 8 | 2SB977 |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 9 | 2SB977A |
Panasonic Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 10 | 2SB979 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SB979 |
Inchange Semiconductor |
Silicon PNP Darlington Power Transistor |
|
| 12 | 2SB900 |
SavantIC |
SILICON POWER TRANSISTOR |
|