Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SB979 |
Click to view a larger image
| Part Number | 2SB979 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
A
VBE(on) Base -Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
20
MHz
hFE-2Classifications Q S P 60-120 80-160 100-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification... |
| Document |
 2SB979 Data Sheet
PDF 220.08KB |
| Distributor | Stock | Price | Buy |
|---|
