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2SB975 |
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| Part Number | 2SB975 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -3A ·Complement to Type 2SD1309 ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
n Power Transistor
2SB975
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A, IB= -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A, IB= -3mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
RL= 16.7Ω, VCC≈ -50V IC= -3A; IB1= -IB2= -3mA
MIN TYP. MAX UNIT
-1.5
V
-2.0
V
-1.0 μA
-5
m... |
| Document |
 2SB975 Data Sheet
PDF 190.47KB |
| Distributor | Stock | Price | Buy |
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