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·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power d.
VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-5V -120 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -50 µA Emitter cut-off current -50 µA DC current gain 60 320 DC current gain 20 Output capacitance 150 pF Transition frequency 75 MHz hFE-1 classifications R 60-120 Q 100-200 P 160-320 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB965 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3.
2SB965 - Inchange Semiconductor
·Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB962-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2SB962-Z |
Kexin |
PNP Transistor |
|
| 3 | 2SB962-Z |
Renesas |
PNP Transistor |
|
| 4 | 2SB963 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB963-Z |
NEC |
PNP Transistor |
|
| 6 | 2SB963-Z |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB966 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB966 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB967 |
Panasonic Semiconductor |
PNP Transistor |
|
| 10 | 2SB967 |
Panasonic |
Silicon PNP epitaxial planar type power transistor |
|
| 11 | 2SB967 |
Kexin |
Transistor |
|
| 12 | 2SB967 |
TY Semiconductor |
Transistor |
|
