The 2SB963-Z is designed for switching, especially in Hybrid Integrated Circuits.
• High Gain hFE = 2000 to 3000
• Complement to 2SD1286-Z
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2 5.0 ±0.2 4.4 ±0.2
4
Note
1.5
+0.2 −0.1
2.3 ±0.2 0.5 ±0.1 Note
5.6 ±0.3 9.5 ±0.5
5.5 ±0.2
123
1.0 ±0.5 0.4 MIN. 0.5 TYP.
2.5 ±0.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector Current (DC) Collector Current (pulse) Note 1 Total Power Dissipation Note 2 Junction Temperature Storage Temperature
VCBO VCEO VEBO IC(DC) IC(pulse) PT (TA = 25°C)
Tj Tstg
−60 −60 −8 m1.0 m2.0 2.0 150 −55 to +150
V V V A A W °C °C
2.3 .
·With TO-252(DPAK) packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB963 |
INCHANGE |
PNP Transistor | |
2 | 2SB962-Z |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
3 | 2SB962-Z |
Kexin |
PNP Transistor | |
4 | 2SB962-Z |
Renesas |
PNP Transistor | |
5 | 2SB965 |
NEC |
PNP Transistor | |
6 | 2SB965 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SB965 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
8 | 2SB966 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB966 |
Inchange Semiconductor |
Silicon PNP Power Transistors | |
10 | 2SB967 |
Panasonic Semiconductor |
PNP Transistor | |
11 | 2SB967 |
Panasonic |
Silicon PNP epitaxial planar type power transistor | |
12 | 2SB967 |
Kexin |
Transistor |