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·Low Collector Saturation Voltage : VCE(sat)= -0.3V(Typ)@IC= -2.0A ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(T.
PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage IEBO Emitter Cutoff Current ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain IC= -2.0A; IB= -200mA IC= -2.0A; IB= -200mA VEB= -3V; IC= 0 VCB= -30V; IE= 0 IC= -1A; VCE= -2V IC= -20mA; VCE= -2V -0.3 -0.5 V -1.0 -2.0 V -1.0 μA -10 μA 60 400 30 fT Transition frequency VCE=-5V ,IC=-100mA 80 MHz Cob Collector output capacitance VCB=-10V ,IE=0,f=1MHz 55 pF NOTE:Pulse test PW≤350us,duty cycle ≤2% hFE1 .
2SB962-Z - Kexin
SMD Type PNP Transistors 2SB962-Z Transistors ■ Features ● Low collector to emitter saturation voltage VCE(sat). + 1.
2SB962-Z - Renesas
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB963 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB963-Z |
NEC |
PNP Transistor |
|
| 3 | 2SB963-Z |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB965 |
NEC |
PNP Transistor |
|
| 5 | 2SB965 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB965 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 7 | 2SB966 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB966 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB967 |
Panasonic Semiconductor |
PNP Transistor |
|
| 10 | 2SB967 |
Panasonic |
Silicon PNP epitaxial planar type power transistor |
|
| 11 | 2SB967 |
Kexin |
Transistor |
|
| 12 | 2SB967 |
TY Semiconductor |
Transistor |
|