2SB965 Inchange Semiconductor Silicon PNP Power Transistors Datasheet, en stock, prix

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2SB965

Inchange Semiconductor
2SB965
2SB965 2SB965
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Part Number 2SB965
Manufacturer Inchange Semiconductor
Description ·Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1288 ·100% avalanche tested ·Minimum Lot-to-Lot ...
Features ONDITIONS VCE(sat)NOTE Collector-Emitter Saturation Voltage IC= -4.0A; IB= -0.4A VBE(sat)NOTE Base-Emitter Saturation Voltage IC= -4.0A; IB= -0.4A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Collector Cutoff Current VCB= -120V; IE= 0 hFE1NOTE DC Current Gain IC= -1A; VCE= -5V MIN TYP MAX UNIT -0.55 -1.5 V -1.25 -2.0 V -50 μA -50 μA 60 320 hFE2NOTE DC Current Gain IC= -50mA; VCE= -5V 40 fT Transition frequency VCE=-5V ,IC=-1A 75 MHz Cob Collector output capacitance VCB=-10V ,IE=0,f=1MHz 150 pF NOTE:Pulse test PW≤350us,duty cycle ≤2%
 hFE1 Classificat...

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