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2SB642 |
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| Part Number | 2SB642 |
| Manufacturer | Panasonic Semiconductor |
| Description | Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 High foward c... |
| Features |
q q
1.5
0.4
1.5 R0.9 R0.9
High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
Ratings –60 –50 –7 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Collector 3:Emitter 3 0.55±... |
| Document |
 2SB642 Data Sheet
PDF 50.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|