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2SB503 |
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| Part Number | 2SB503 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
akdown Voltage
IC= -0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -2.5A; VCE= -5V
MIN TYP. MAX UNIT
-50
V
-70
V
-8
V
-1.5
V
-1.8
V
-10 μA
-100 μA
30
280
15
hFE Classifications R O Y 30-70 50-140 100-280 NOTICE： ISC reserves the rights to make changes ... |
| Document |
 2SB503 Data Sheet
PDF 211.28KB |
| Distributor | Stock | Price | Buy |
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