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·With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage E.
ff current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-0.3A ; VCE=-10V 35 MIN -100 -7 2SB506 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.0 -1.5 -0.1 -0.1 200 20 V V mA mA MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB506 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 .
2SB506 - INCHANGE
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max..
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB502 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB502A |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 3 | 2SB503 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB503A |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 5 | 2SB507 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB507 |
SavantIC |
Silicon PNP Power Transistors |
|
| 7 | 2SB507 |
GME |
PNP Epitaxial Silicon Transistor |
|
| 8 | 2SB507 |
DC COMPONENTS |
PNP Transistor |
|
| 9 | 2SB507 |
Hottech |
PNP Transistor |
|
| 10 | 2SB508 |
INCHANGE |
PNP Transistor |
|
| 11 | 2SB509 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB510 |
ETC |
NPN/PNP SILICON TRANSISTOR |
|