SILICON PNP TRIPLE DIFFUSED MESA TYPE A AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A) • Complementary to 2SD877. INDUSTRIAL APPLICATIONS Unit in mm 01 §7 MAX. MAXIMUM RATINGS (Ta = 25 °c) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base 2SB502A Voltage 2SB50.
:
• Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A)
• Complementary to 2SD877.
INDUSTRIAL APPLICATIONS Unit in mm
01 §7 MAX.
MAXIMUM RATINGS (Ta = 25 °c)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base
2SB502A
Voltage
2SB503A
Collector-Emitter 2SB502A
Voltage "
2SB503A
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power
Ta=25°C
Dissipation
Tc=25°C
Junction Temperature
'CBO 'CEO 'EBO IE
-110 -80 -80 -50 -10 -3
1.5 25
150
1. BA S E
2. EMITTER COLLECTOR (CAS E)
TOSHIBA
TO-66 TC-16A, TB- 23 2-13A1
Storage Temperature Range
stg
ELECTRI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB503 |
INCHANGE |
PNP Transistor | |
2 | 2SB502 |
INCHANGE |
PNP Transistor | |
3 | 2SB502A |
Toshiba |
SILICON PNP TRANSISTOR | |
4 | 2SB506 |
INCHANGE |
PNP Transistor | |
5 | 2SB506 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SB507 |
INCHANGE |
PNP Transistor | |
7 | 2SB507 |
SavantIC |
Silicon PNP Power Transistors | |
8 | 2SB507 |
GME |
PNP Epitaxial Silicon Transistor | |
9 | 2SB507 |
DC COMPONENTS |
PNP Transistor | |
10 | 2SB507 |
Hottech |
PNP Transistor | |
11 | 2SB508 |
INCHANGE |
PNP Transistor | |
12 | 2SB509 |
SavantIC |
SILICON POWER TRANSISTOR |