Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V 1.5 2.0 4.0 .
q q q
Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V
1.5
2.0
4.0
1.5
Solder Dip
s
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings
–120
–100
–5
–8
–5 60 3.5 150
–55 to +150 Unit V V V A
2.7±0.3
0.6±0.2 5.45±0.3 10.9±0.5
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Stora.
·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A ·Comp.
• High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: VCE(satr -2.5V(Max.)@lc= -4A • Comple.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
2 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor | |
4 | 2SB1503 |
INCHANGE |
PNP Transistor | |
5 | 2SB1504 |
Panasonic |
Silicon PNP epitaxial planar type darlington | |
6 | 2SB1507 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
7 | 2SB1507 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SB1507 |
New Jersey Semi-Conductor |
Silicon PNP Power Transistor | |
9 | 2SB1507 |
INCHANGE |
PNP Transistor | |
10 | 2SB1508 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
11 | 2SB1508 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1508 |
INCHANGE |
PNP Transistor |