2SB1504 - Panasonic

2SB1504 Silicon PNP epitaxial planar type darlington

Power Transistors 2SB1504 Silicon PNP epitaxial planar type darlington Unit: mm For power switching • High forward current transfer ratio hFE • High-speed switching • Allowing automatic insertion with radial taping 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 ■ Absolute Maximum Ratings Ta = 25°C Parame.

Features

en) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1
* hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf Conditions IC = −30 mA, IB = 0 VCB = −50 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4 A VCE = −3 V, IC = −8 A IC = −4 A, IB = −8 mA IC = −4 A, IB = −8 mA VCB = −10 V, IE = 0.5 A, f = 200 MHz IC = −4 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V 20 0.5 2.0 1.0 1 000 500 −1.5 −2.0 V V MHz µs µs µs Min −50 −100 −2 10 000 Typ Max Un.