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2SB1502 |
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| Part Number | 2SB1502 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 5000(Min)@IC= -4A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
fied
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -4mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -4A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -4A; IB... |
| Document |
 2SB1502 Data Sheet
PDF 236.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1502 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1502 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|
| 3 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|