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2SB1502 |
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| Part Number | 2SB1502 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q ... |
| Features |
q q q
Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V
1.5
2.0
4.0
1.5
Solder Dip
s
20.0±0.5 2.5
2.0±0.3 3.0±0.3 1.0±0.2
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –120 –100 –5 –8 –5 60 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Stora... |
| Document |
 2SB1502 Data Sheet
PDF 70.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1502 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|
| 2 | 2SB1502 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1503 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SB1503 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB1503 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |
|