2SB1477 - New Jersey Semi-Conductor

2SB1477 Silicon PNP Power Transistor

• Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SD2236 • -^ ^ j : j , ft 1 I 1 2 3 f *• C •*••--• <"• 3 PIN 1.BASE 2. COLLECT OR 3. BETTER TO-247 package APPLICATIONS • Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT i > 0 *.

Features

1.10 1.60 2.10 11.00 2.60 0.70 20.50 4.10 3.50 5.40 3.10 Ic Collector Current-Continuous Collector Power Dissipation @ TC=25'C -5 A PC 60 W Tj Junction Temperature 150
•c r Tstg Storage Temperature Range -55-150 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourag.