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2SB1477 |
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| Part Number | 2SB1477 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
E=0
V(BR)EBO Emitter-Base Beakdown Voltage
IE=-50μA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
100
V
100
V
5
V
-1.5 V
-2.0 V
-10 μA
-10 μA
60
320
hFE Classifications D E F 60-120 100-200 160-320 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information ... |
| Document |
 2SB1477 Data Sheet
PDF 215.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1470 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1470 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1470 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1471 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB1472 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|