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2SB1474 Transistor Power Transistor (−80V, −4A) 2SB1474 !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 1.0 0.5 0.5 1.5 2.5 9.5 Parameter Collector-base voltage Collector-emitter voltage Emitt.
1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65 2.3
1.0 0.5
0.5
1.5 2.5 9.5
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCES VEBO IC PC Tj Tstg
Limits -80 -80 -7 -4 -6 1 10 150 -55~+150
Unit V V V A(DC) A W W (Tc=25˚C)
ROHM : CPT3 EIAJ : SC-63
*
˚C ˚C
*
Single pulse, Pw=100ms
!Packaging specifications .
2SB1474 - Rohm
2SB1474 Transistor Power Transistor (−80V, −4A) 2SB1474 !Features 1) Darlington connection for a high hFE. 2) Built-in .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1470 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1470 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1470 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1471 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB1472 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SB1475 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SB1475 |
Kexin |
PNP Silicon Epitaxial Transistor |
|
| 8 | 2SB1476 |
Sanken Electric |
PNP Transistor |
|
| 9 | 2SB1477 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB1477 |
New Jersey Semi-Conductor |
Silicon PNP Power Transistor |
|
| 11 | 2SB1477 |
INCHANGE |
PNP Transistor |
|
| 12 | 2SB1478 |
SavantIC |
SILICON POWER TRANSISTOR |
|