·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collect.
turation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-160V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 1000 3500 MIN -160 2SB1470 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -3.0 -3.0 -100 -100 -100 V V µA µA µA 20000 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-7A ;IB1=-IB2=-7mA VCC=-50V 1.
·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat) ·Minimum Lot-to-Lot varia.
Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For po.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1471 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
2 | 2SB1472 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | 2SB1474 |
Rohm |
Power Transistor | |
4 | 2SB1474 |
Rohm |
Power Transistor | |
5 | 2SB1475 |
NEC |
PNP SILICON EPITAXIAL TRANSISTOR | |
6 | 2SB1475 |
Kexin |
PNP Silicon Epitaxial Transistor | |
7 | 2SB1476 |
Sanken Electric |
PNP Transistor | |
8 | 2SB1477 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SB1477 |
New Jersey Semi-Conductor |
Silicon PNP Power Transistor | |
10 | 2SB1477 |
INCHANGE |
PNP Transistor | |
11 | 2SB1478 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | 2SB1478 |
New Jersey Semi-Conductor |
Silicon PNP Darlington Power Transistor |