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Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −120 Collector-.
1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage VCBO −120 Collector-emitter voltage VCEO −120 Emitter-base voltage VEBO −5 Collector current −1.5 IC −3 Collector power dissipation PC 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. Unit V V V A (.
2SB1236 - INCHANGE
·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Co.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1230 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB1230 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1230 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1231 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 5 | 2SB1231 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1232 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 7 | 2SB1234 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 8 | 2SB1235 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SB1236A |
Rohm |
Power Transistor |
|
| 10 | 2SB1237 |
Rohm |
Medium Power Transistor |
|
| 11 | 2SB1238 |
ROHM |
Medium power transistor |
|
| 12 | 2SB1239 |
Rohm |
Power transistor |
|