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2SB1236 |
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| Part Number | 2SB1236 |
| Manufacturer | ROHM (https://www.rohm.com/) |
| Description | Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition fre... |
| Features |
1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance.
(Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−120
Collector-emitter voltage
VCEO
−120
Emitter-base voltage
VEBO
−5
Collector current
−1.5 IC
−3
Collector power dissipation
PC
1
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw = 100ms ∗2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A (... |
| Document |
 2SB1236 Data Sheet
PDF 62.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1230 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB1230 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1230 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB1231 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 5 | 2SB1231 |
INCHANGE |
PNP Transistor |
|