2SB1230 - INCHANGE

2SB1230 PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general High-current switching applications. ABSOLUTE MAXIMUM RATINGS.

Features

℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(sat) Base -Emitter Saturation Voltage IC= -6A; IB= -0.6A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1.5A; VCE= -2V hFE-2 DC Current Gain IC= -6A; VCE= -2V  hFE-1 Classifications P Q 50-100 70-14.