2SB1183 / 2SB1239 Transistors Power transistor (−40V, −2A) 2SB1183 / 2SB1239 !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. !External dimensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1..
1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. !External dimensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1.0 0.9 14.5 4.4 1.5 2.5 9.5 B RBE 4kΩ ROHM : CPT3 EIAJ : SC-63 E (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) C : Collector B : Base E : Emitter 2SB1239 6.8 2.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SB1230 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors | |
2 | 2SB1230 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SB1230 |
INCHANGE |
PNP Transistor | |
4 | 2SB1231 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor | |
5 | 2SB1231 |
INCHANGE |
PNP Transistor | |
6 | 2SB1232 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor | |
7 | 2SB1234 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor | |
8 | 2SB1235 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
9 | 2SB1236 |
Rohm |
Power Transistor | |
10 | 2SB1236 |
INCHANGE |
Silicon PNP Power Transistor | |
11 | 2SB1236A |
Rohm |
Power Transistor | |
12 | 2SB1237 |
Rohm |
Medium Power Transistor |