Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SB1230 |
Click to view a larger image
| Part Number | 2SB1230 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A
VBE(sat) Base -Emitter Saturation Voltage
IC= -6A; IB= -0.6A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -6A; VCE= -2V
hFE-1 Classifications P Q 50-100 70-14... |
| Document |
 2SB1230 Data Sheet
PDF 216.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1230 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SB1230 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB1231 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|
| 4 | 2SB1231 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1232 |
Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
|