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·With TO-3PFa package ·Complement to type 2SD1713 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collec.
current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 60 20 MIN 2SB1158 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 180 20 pF MHz hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1158 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm.
2SB1158 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Comple.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SB1150 |
NEC |
PNP Transistor |
|
| 2 | 2SB1151 |
SeCoS |
PNP Transistor |
|
| 3 | 2SB1151 |
NEC |
PNP Silicon Transistor |
|
| 4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor |
|
| 6 | 2SB1151 |
INCHANGE |
TO-126 PNP Transistor |
|
| 7 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors |
|
| 8 | 2SB1152 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | 2SB1154 |
Panasonic Semiconductor |
PNP Transistor |
|
| 11 | 2SB1154 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SB1154 |
INCHANGE |
PNP Transistor |
|