2SB1158 INCHANGE PNP Transistor Datasheet, en stock, prix

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2SB1158

INCHANGE
2SB1158
2SB1158 2SB1158
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Part Number 2SB1158
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1713 ·Minimum Lot-to-Lot variations for robust device performanc...
Features on Voltage IC= -4A; IB= -0.4A VBE(on) Base -Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -4A; VCE= -5V
 hFE-2Classifications Q S P 60-120 80-160 100-200 2SB1158 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is ...

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