2SB1152 - Inchange Semiconductor

2SB1152 Silicon PNP Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO .

Features

n) Base -Emitter On Voltage IC= -8A; VCE= -5V ICBO Collector Cutoff Current VCB= -160V ; IE=0 IEBO Emitter Cutoff Current VEB= -3V; IC=0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -8A; VCE= -5V  hFE-2Classifications Q S P 60-120 80-160 100-200 2SB1152 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the app.