2SB1153 - Inchange Semiconductor

2SB1153 Silicon PNP Power Transistors

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -170 V VCEO .

Features

ltage IC= -10A; IB= -1A -2.5 V VBE(on) Base -Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC=0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -8A; VCE= -5V 20 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 230 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz  hFE-2Classifications Q S P 60-120 80-160 100-200 NOTICE： ISC reserves the rights to make changes of the co.