2SB1072L - Hitachi Semiconductor

2SB1072L PNP Transistor

2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 ID 3 kΩ (Typ) 0.4 kΩ (Typ) 3 S Type 3 L Type 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base.

Features

I C =
  –2 A, IB =
  –4 mA
*1 I C =
  –4 A, IB =
  –40 mA
*1 I C =
  –2 A, IB =
  –4 mA
*1 I C =
  –4 A, IB =
  –40 mA
*1 I D = 4 A
*1 I C =
  –2 A, IB1 =
  –IB2 =
  –4 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t stg tf 2 2SB1072(L), 2SB1072(S) Maximum Collector Dissipation Curve 30 Collector po.